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SOT-23 Formed SMD Package
CMBT5551
SILICON N–P–N HIGH–VOLTAGE
TRANSISTOR
N–P–N
transistor
Marking CMBT5551 = G1
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current Total power dissipation up to Tamb = 25 °C Junction temperature Collector–emitter saturation voltage IC = 50 mA; IB = 5 mA D.
C.
current gain IC = 10 mA; VCE = 5 V RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (ope...