MS1079
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RF & MICROWAVE
TRANSISTORS HF SSB APPLICATIONS
Features
• • • • • 30 MHz 50 VOLTS POUT = 220 W GP = 13 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1079 is a 50 V epitaxial silicon
NPN planar
transistor designed primarily for SSB communications.
This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO VCEO VEBO IC PDISS TJ TSTG
Parameter
Value
110 55 4.
0 12 320 +200 -65 to +150
Unit
V V V A W °C °C
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
Thermal Data
RTH(J-C) Juncti...