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AON4420L N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low RDS(ON) per unit area.
This device is ideal for load switch and high speed switching applications.
Features
VDS (V) = 30V ID = 10A RDS(ON) 19mΩ RDS(ON) 25mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.
5V)
- RoHS Compliant - Halogen Free
DFN 3x2 Top View Pin 1 Bottom View D D D G D D D S G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Pulsed Drain Current Continuous Drain Current A Power Dissipation
A C
Maximum 30 ...