2STC5200
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High power
NPN epitaxial planar bipolar
transistor
Features
■ ■ ■ ■
High breakdown voltage VCEO 230V Complementary to 2STA1943 Fast-switching speed Typical fT = 30 MHz
3
Application
■
Audio power amplifier
1
2
TO-264
Description
This device is a
NPN transistor manufactured using new BiT-LA (Bipolar
Transistor for linear amplifier) technology.
The resulting
transistor shows good gain linearity behaviour.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code 2STC5200 Marking 2STC5200 Package TO-264 Packaging Tube
December 2007
Rev 2
1/9
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Electrical ratings
2STC5200
1
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Electrical ratings
Table 2.
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