2STC5949
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High power
NPN epitaxial planar bipolar
transistor
Features
■ ■ ■ ■ ■
High breakdown voltage VCEO = 250 V Complementary to 2STA2121 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC
Applications
■
Audio power amplifier
TO-264
Description
The device is a
NPN transistor manufactured using new BiT-LA (Bipolar
transistor for linear amplifier) technology.
The resulting
transistor shows good gain linearity behaviour.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking 2STC5949 Package TO-264 Packaging Tube
Order code 2STC5949
July 2008
Rev 3
1/8
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Absolute maximum ratings
2STC5949
1
Absolute maximum rati...