PD -93910 www.
datasheet4u.
com IRLBD59N04E HEXFET® Power MOSFET VDSS = 40V RDS(on) = 0.
018Ω ID = 59A† l l l l l l Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected Description The IRLBD59N04E is a 40V, N-channel HEXFET® power MOSFET with gate protection provided by integrated back to back zener diodes.
Temperature sensing is given by the change in forward voltage drop of two antiparallel electrically isolated poly-silicon diodes.
The IRLBD59N04E provides cost effective temperature sensing for system protection along with the quality and ruggedness you expect from a HEXFET power MOSFET.
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