Part Number
|
DB-55008L-450 |
Manufacturer
|
ST Microelectronics |
Description
|
RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs |
Published
|
Jun 9, 2009 |
Detailed Description
|
DB-55008L-450
www.datasheet4u.com
RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Pr...
|
Datasheet
|
DB-55008L-450
|
Overview
DB-55008L-450
www.
datasheet4u.
com
RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
■ ■ ■ ■ ■ ■ ■
Excellent thermal stability Frequency: 318 - 450 MHz Supply voltage: 13.
6 V Output power: 8 W Power gain: 14.
6 ± 0.
6 dB Efficiency: 52 % - 73 % BeO free amplifier
Description
The DB-55008L-450 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for UHF mobile applications.
Table 1.
Mechanical specification: L = 60 mm, W = 30 mm
Device summary
Order codes DB-55008L-450
March 2009
Rev 1
1/14
www.
st.
com 14
This is preliminary information on a new product now in development or undergoing ev...
Similar Datasheet