BLL6H0514-25
LDMOS driver
transistor
Rev.
02 — 17 March 2009
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Objective data sheet
1.
Product profile
1.
1 General description
25 W LDMOS
transistor intended for pulsed applications in the 0.
5 GHz to 1.
4 GHz range.
Table 1.
Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.
Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (µs) 128 300 δ (%) 10 10 VDS (V) 50 50 PL (W) 25 25 Gp (dB) 21 19 RLin (dB) 10 10 ηD (%) 58 50 Pdroop(pulse) (dB) 0.
05 0.
05 tr (ns) 8 8 tf (ns) 6 6
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
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