MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Sub–Micron MOSFET Line
RF Power Field Effect
Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM 900 MHz frequency band, the high gain and broadband performance www.
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com of these devices make them ideal for large–signal, common– source amplifier applications in 26 volt base station equipment.
• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.
5 dB Efficiency @ P1db: 55% • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Ma...