Freescale Semiconductor Technical Data
Replaced by MRF6S18060NR1/NBR1.
There are no form, fit or function changes with this part replacement.
N suffix added to part number to indicate transition to lead - free terminations.
Document Number: MRF6S18060 Rev.
2, 5/2006
RF Power Field Effect
Transistors
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MRF6S18060MR1 MRF6S18060MBR1
1800 - 2000 MHz, 60 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz.
Suitable for TDMA, CDMA, and multicarrier amplifier applications.
ARCHIVE INFORMATION
CASE 1486 - 03, STYLE 1 TO - 270 WB -...