Freescale Semiconductor Technical Data
Document Number: MRF6S18100N Rev.
1, 5/2006
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz .
S u i t a b l e f o r T D M A , C D M A a n d multicarrier amplifier applications.
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MRF6S18100NR1 MRF6S18100NBR1
1805- 1990 MHz, 100 W, 28 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs
GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 100 Watts, Full Frequency Band (1805 - 1880 MHz or 1930- 1990 MHz) Power Gain — 14.
5 dB Drain Efficiency — 49% GSM EDGE Application • Typical G...