Freescale Semiconductor Technical Data
Document Number: MRF6S19100H Rev.
3, 8/2005
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .
To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L www.
datasheet4u.
com applications.
• Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 22 Watts Avg.
, Full Frequency Band, IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.
2288 MHz.
PAR = 9.
8 dB @ 0.
01% Probability on CCDF.
...