STAP1011-180
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RF power
transistor the LdmoST family, N-channel enhancement-mode lateral MOSFETs
Features
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Excellent thermal stability Common source configuration push-pull POUT = 180W with 10 dB gain @ 1030 MHz 36 V/100 µsec - 10% Plastic package In compliance with the 2002/95/EC european directive
Description
The STAP1011-180 is a common source N-channel enhancement-mode lateral field-effect RF power
transistor.
It is designed for 1030-1090 MHz avionics applications.
STAP1011-180 is mounted in STAP ST advanced PowerSO-10RF package.
The STAP package was designed to offer high reliability and power capability.
It has been specially optimized for RF needs and of...