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CYStech Electronics Corp.
Spec.
No.
: C817L3 Issued Date : 2003.
07.
31 Revised Date :2004.
12.
15 Page No.
: 1/3
Low VCE(sat)
PNP Epitaxial Planar
Transistor
BTB1424L3
Features
• Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.
4V(typ) (IC=-2A, IB=-100mA).
•Complementary to BTD2150L3
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed) (Note 1) Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature
Note : Single pulse, Pw≤10ms, Duty Cycle≤30%.
Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg
Limits -50 -50 -6 -3 -5 (Note) 5 15...