GT35J321
www.
DataSheet4U.
com TOSHIBA INSULATED GATE BIPOLAR
TRANSISTOR
SILICON N CHANNEL IGBT
GT35J321
Fourth-generation IGBT Current Resonance Inverter Switching Applications
z z z z z Enhancement mode High speed: tf = 0.
19 μs (typ.
) (IC = 50 A) Low saturation voltage: VCE (sat) = 1.
9 V (typ.
) (IC = 50 A) FRD included between emitter and collector Toshiba package name: TO-3P(N)IS Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector−emitter voltage Gate−emitter voltage Collector current (DC) @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP DC Pulse @ Tc = 100°C @ Tc = 25°C IF IFP PC Tj Tstg Rating 600 ±25 18 37 100 20 40 30 75 150 −55 to 150 Unit V V A A A 1.
GATE 2.
CO...