2ST5949
High power
NPN epitaxial planar bipolar
transistor
Features
■ High breakdown voltage VCEO = 250 V
■ Complementary to 2ST2121
■ Typical ft = 25 MHz
t(s) ■ Fully characterized at 125 oC uc Application rod ■ Audio power amplifier te P Description le The device is a
NPN transistor manufactured o using new BiT-LA (Bipolar
transistor for linear s amplifier) technology.
The resulting
transistor b shows good gain linearity behaviour.
1 2
TO-3
Figure 1.
Internal schematic diagram
Obsolete Product(s) - O Table 1.
Device summary
Order code
Marking
Package
Packaging
2ST5949
2ST5949
TO-3
tray
November 2008
Rev 4
1/8
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st.
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8
Absolute maximum ratings
1
Absolute maximum ra...