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ST 13003
NPN Silicon Epitaxial Planar
Transistor
for power switching and electron rectifier applications.
The
transistor is subdivided into one group according to its DC current gain.
TO-220 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj Ts Value 600 400 9 1.
5 1.
5 150 -55 to +150 Unit V V V A W
O
C C
O
Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 100 mA Collector Base Breakdown Voltage at IC = 1 mA Collector Emitter Breakdown Voltage...