com SMD Type Dual P-Channel 30-V (D-S) MOSFET KI4923DY IC IC Features TrenchFET Power MOSFETS Advanced High Cell Density Process 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * TA = 25 TA = 70 Operating Junction and Storage Temperature Range Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) * Surface Mounted on 1" X 1' FR4 Board.
t 10 sec TJ, Tstg Symbol RthJA RthJF Typ 45 85 26 )* TA = 25 TA = 70 IDM IS PD -1.
7 2 1.
3 -55 to 150 Max 6...

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