www.
DataSheet4U.
com
S T G 8203
J un.
06 2005 ver1.
2
S amHop Microelectronics C orp.
Dual N-C hannel E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( m £[ ) Max
ID
5A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
27 @ V G S = 4.
0V 42 @ V G S = 2.
5V
R ugged and reliable.
S urface Mount P ackage.
( 1 ) D1
D2( 8 )
T S S OP
1 2 3 4 8 7 6 5
(T OP V IE W)
( 4 ) G1 ( 2,3 ) S 1
G2 ( 5 ) S 2 ( 6,7 )
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T C =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Op...