SSM3J15CT
TOSHIBA Field Effect
Transistor Silicon P-Channel MOS Type
SSM3J15CT
High-Speed Switching Applications Analog Switch Applications
• Optimum for high-density mounting in small packages
• Low ON-resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.
5 V)
0.
6±0.
05 0.
5±0.
03
Unit: mm
0.
65±0.
02 0.
05±0.
03
0.
25±0.
03
Absolute Maximum Ratings (Ta = 25°C)
３
1.
0±0.
05
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
−30
V
Gate-Source voltage
VGSS
±20
V
Drain current
DC Pulse
ID
−100
mA
IDP
−200
Drain power dissipation (Ta = 25°C) PD (Note 1)
100
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
0.
25±0.
...