PSMN1R5-25YL
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N-channel TrenchMOS logic level FET
Rev.
01 — 16 June 2009 Product data sheet
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Product profile
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1 General description
Logic level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in industrial and communications applications.
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2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources
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3 Applications
Class-D amplifiers DC-to-DC converters Motor control Server power supplies
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4 Quick reference data
Table 1.
VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V...