RF5510

RF5510 : The RF5510 is a SP3T switch designed in a small 0.88mmx0.80mmx0.38mm FLIP CHIP die. This device is capable of switching between WLAN RX, WLAN TX, and BluetoothTM RX/TX operations. The RF5510 can also be placed in WLAN and Bluetooth™ receive modes simutaneously with a slight increase in insertion loss. This device meets or exceeds the RF switch needs of IEEE802.11b/g WLAN RF systems. Ordering Information RF5510 11b/g WLAN SP3T Switch RF5510PCBA-410 Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT SiGe BiCMOS 9GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS RF MEMS InGaP HBT SiGe HBT Si BJT LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Mat.

RF5511 : www.DataSheet4U.com RFMD. ® Switch and Switch + LNA Front End Solutions Designed specifically for high-performance WiFi applications in the 2.4 GHz to 2.5 GHz ISM band, the RF5501 MMIC and RF5511 flip-chip MMIC address the need for size reduction for a typical IEEE 802.11b/g/n front end design. Featuring an integrated SP3T switch and a low noise amplifier, these solutions also reduce the number of components required outside of the core chipset. The RF5500 and RF5510, singlepole triple-throw switches, are capable of switching between WiFi receive and transmit operations, and Bluetooth® receive and transmit operations. These switch front end solutions meet or exceed the RF front end needs o.

RF5511 : The RF5511 is a front end solution for high-performance WLAN applications in the 2.4GHz to 2.5GHz ISM band. The RF5511 addresses the need for size reduction for a typical IEEE802.11b/g front end design and reduces the number of components outside of the core chipset. The RF5511 has an integrated SP3T Switch and a Low Noise Amplifier. It is capable of switching between WLAN RX, WLAN TX, and BluetoothTM RX/TX operations. The RF5511 is provided in a 1mmx1mmx0.4mm, Flip Chip die. Ordering Information RF5511 3.3V, Switch and LNA Front End Solution RF5511PCK-41X Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT SiGe BiCMOS 9GaAs pHEMT GaN HEMT GaAs MESFET Si.

RF5515 : The RF5515 is a high performance Low Noise Amplifier design for 802.11a applications (4.9GHz to 5.85GHz) and other portable consumer electronics. This miniature LNA features a high dynamic range and high intercept point with low current consumption around 12mA. The LNA is DC blocked and internally matched to 50 at input and output pins. The IC is featured in a 2.2mm x 2.2mm x 0.5mm module compatible plastic package. Ordering Information RF5515 RF5515SR RF5515TR7 RF5515PCK-410 Standard 25 piece bag Standard 100 piece reel Standard 2500 piece reel Fully assembled evaluation board and 5 piece loose samples DS111025 Optimum Technology Matching® Applied GaAs HBT SiGe BiCMOS GaAs pHEMT .

RF5516 : The RF5516 provides a complete integrated solution in a single Front-End Module (FEM) for WiFi 802.11a systems. The ultra small form factor and integrated matching minimizes the layout area in the customer's application and greatly reduces the number of external components to only one bypass capacitor for supply decoupling. This simplifies the total Front-End solution by reducing the bill of materials, system footprint, and manufacturability cost. The RF5516 integrates a Power Amplifier (PA), Single Pole Double Throw switch (SP2T), Low Noise Amplifier (LNA), and a power detector coupler for improved accuracy. The device is provided in a 3mmx3mmx0.5mm, 16-pin package. This module meets or exc.