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Freescale Semiconductor Technical Data
Document Number: MRF7S15100H Rev.
0, 7/2008
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1470 to 1510 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 600 mA, Pout = 23 Watts Avg.
, f = 1507.
5 MHz, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 19.
5 dB Drain Ef...