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Freescale Semiconductor Technical Data
Document Number: MRF7S19210H Rev.
0, 12/2008
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulations.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg.
, Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 20 dB Drain Efficiency — 29% Device Output Signal PAR — 5.
9 dB @ 0.
01% Pr...