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ST 9012
PNP Silicon Epitaxial Planar
Transistor
for switching and amplifier applications.
Especially suitable for AF-driver stages and low power output stages.
The
transistor is subdivided into three groups, G, H and I, according to its DC current gain.
As complementary type the
NPN transistor 9013 is recommended.
1.
Emitter 2.
Base 3.
Collector TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO -IC Ptot Tj Tstg
Value 40 30 5 500 625 150 - 55 to + 150
Unit V V V mA mW
O
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