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BLF6G20-180RN; BLF6G20LS-180RN
Power LDMOS
transistor
Rev.
01 — 17 November 2008 Product data sheet
1.
Product profile
1.
1 General description
180 W LDMOS power
transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation 2-carrier WCDMA
[1]
f (MHz) 1930 to 1990
VDS (V) 30
PL(AV) (W) 40
Gp (dB) 17.
2
ηD (%) 27
IMD3 (dBc) −38[1]
ACPR (dBc) −41[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 10 MHz.
CAUTION This device is sensitive to ElectroStatic Disch...