Part Number
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MSAGA11F120D |
Manufacturer
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Microsemi Corporation |
Description
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Fast IGBT Die |
Published
|
Jul 31, 2009 |
Detailed Description
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www.DataSheet4U.com
2830 S. Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989
MSAGA11F120D...
|
Datasheet
|
MSAGA11F120D
|
Overview
www.
DataSheet4U.
com
2830 S.
Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989
MSAGA11F120D
Fast IGBT Die for Implantable Cardio Defibrillator Applications
DESCRIPTION:
• • • N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .
8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.
2 um typical.
• Collector/Gate Metallization: Ti – Ni (1 um) – Ag (0.
2 um) for soft solder attach
Surge Current (ICM) - Amps
55
10µs x 4ms double exponential
FEATURES:
• • • • •
Low Forward Voltage Drop, Low Tail Current Avalanche and Surge Rated High Freq.
Switching to 20KHz Ultra Low Leakage Current RBSOA and SCSOA Rated...
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