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MSAGZ52F120A

Part Number MSAGZ52F120A
Manufacturer Microsemi Corporation
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Published Jul 31, 2009
Detailed Description www.DataSheet4U.com 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGZ52F120A MSAHZ...
Datasheet MSAGZ52F120A





Overview
www.
DataSheet4U.
com 2830 S.
Fairview St.
Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGZ52F120A MSAHZ52F120A 1200 Volts 52 Amps 3.
2 Volts vce(sat) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (MSAHZ52F120A only) Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ...






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