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MSAGZ52F120A MSAHZ52F120A
1200 Volts 52 Amps 3.
2 Volts vce(sat)
N-CHANNEL INSULATED GATE BIPOLAR
TRANSISTOR
Features
• • • •
• • • •
Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (MSAHZ52F120A only)
Maximum Ratings @ 25° C (unless otherwise specified)
DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ ...