www.
DataSheet4U.
com EIC5964-4 UPDATED 08/21/2007 5.
90-6.
40 GHz 4-Watt Internally Matched Power FET FEATURES • • • • • • • 5.
90–6.
40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.
5 dBm Output Power at 1dB Compression 10.
0 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at PO = 25.
5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH Caution! ESD sensitive device.
MIN 35.
5 9.
0 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 5.
90-6.
40GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 5.
90-6.
40GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 5.
90-6.
40GHz VDS =...

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