RFP4N05L, RFP4N06L
com
Data Sheet
July 1999
File Number
2876.
2
4A, 50V and 60V, 0.
800 Ohm, Logic Level, N-Channel Power MOSFETs
The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect
transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA09520.
Features
• 4A, 50V and 60V • rDS(ON) = 0.
800Ω • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits...