SMD Type
HEXFET Power MOSFET KRFR9310
Transistors IC
TO-252
+0.
15 1.
50-0.
15
+0.
15 6.
50-0.
15 +0.
2 5.
30-0.
2 +0.
1 2.
30-0.
1 +0.
8 0.
50-0.
7
Unit: mm
Features
Surface Mount
+0.
2 9.
70-0.
2
Fast Switching P-Channel Avanced Process Technology Fully Avalanche Rated
+0.
1 0.
80-0.
1
+0.
15 0.
50-0.
15
0.
127 max
+0.
28 1.
50-0.
1
+0.
25 2.
65-0.
1
+0.
15 5.
55-0.
15
2.
3
+0.
15 4.
60-0.
15
+0.
1 0.
60-0.
1
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings Ta = 25
Parameter Continuous Drain Current, VGS @ -10V,Tc = 25 Continuous Drain Current, VGS @ -10V,Tc = 100 Pulsed Drain Current*1 Power Dissipation Tc = 25 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy*3 Avalanche Current *1 Re...