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DataSheet4U.
com RQA0001DNS Silicon N-Channel MOS FET REJ03G0582-0300 Rev.
3.
00 Oct 11, 2006 Features • High Output Power, High Gain, High Efficiency Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) • Small Outline Package (WSON0303-2: 3.
0 × 3.
0 × 0.
8mm) Outline RENESAS Package code: PWSN0002ZA-A (Package name: HWSON-2 WSON0303-2) 3 2 3 1 1 3 2 1.
Gate 2.
Source 3.
Drain 1 2 Note: Marking is “A0001”.
Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: Value at Tc = 25°C Symbol VDSS VGSS ID Pchnote Tch Tstg Ratings 16 ±5 0.
8 5 150 –50 to +150 Unit V V A ...

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