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ST 2SC1008
NPN Silicon Epitaxial Planar
Transistor
for medium speed switching and low frequency amplifier applications.
The
transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain.
1.
Emitter 2.
Base 3.
Collector TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC Ptot Tj Tstg
Value 80 60 8 700 800 150 - 55 to + 150
Unit V V V mA mW
O
C C
O
Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 50 mA Curren...