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Freescale Semiconductor Technical Data
Document Number: MRF6S20010N Rev.
1, 5/2006
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz.
Suitable for analog and digital modulation and multipurpose amplifier applications.
• Typical Two - Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP Power Gain — 15.
5 dB Drain Efficiency — 36% IMD — - 34 dBc • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg.
, Full Frequency Band (2130 - 2170 MHz), Channel Bandwidth = 3.
84 MHz.
PAR = 8.
5...