FDS4897C Dual N & P-Channel PowerTrench® MOSFET
November 2005
FDS4897C
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect
transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Application
• Inverter
• Power Supplies
Features
• Q1: N-Channel
6.
2A, 40V
RDS(on) = 29mΩ @ VGS = 10V RDS(on) = 36mΩ @ VGS = 4.
5V
• Q2: P-Channel
–4.
4A, –40V RDS(on) = 46mΩ @ VGS = –10V RDS(on) = 63mΩ @ VGS = –4.
5V
• High power handling capability in a widely used surface mount package
• RoHS ...