com
Preliminary Data Sheet
FP2250QFN
PACKAGED LOW NOISE, HIGH LINEARITY PHEMT
•
FEATURES ♦ 29 dBm Output Power at 1-dB Compression ♦ 17 dB Power Gain at 2 GHz ♦ 1.
0 dB Noise Figure at 2 GHz ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency
•
DESCRIPTION AND APPLICATIONS The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility
Transistor (pHEMT).
It utilizes a 0.
25 µm x 2250 µm
Schottky barrier gate, defined by electronbeam photolithography.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance.
The epitaxial structure ...