NDF04N60Z, NDD04N60Z Power MOSFET, N-Channel, 600 V, 2.
0 W •FeLatouwreOsN Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol NDF NDD Unit Drain−to−Source Voltage VDSS 600 V Continuous Drain Current RqJC (Note 1) ID 4.
8 4.
1 A Continuous Drain Current RqJC, TA = 100°C (Note 1) ID 3.
0 2.
6 A Pulsed Drain Current, IDM VGS @ 10V Power Dissipation RqJC PD Gate−to−Source Voltage VGS Single Pulse Avalanche Energy, ID = 4.
0 EAS A 20 20 A 30 83 W ±30 V 120 mJ ESD (HBM) (JESD22−A114) Vesd 3000...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)