Part Number
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ESDA8V2-1J |
Manufacturer
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ST Microelectronics |
Description
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EOS and ESD Transil protection |
Published
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Sep 18, 2009 |
Detailed Description
|
ESDA8V2-1J
EOS and ESD Transil™ protection for charger and battery port
Features
■ Breakdown voltage VBR = 8.2 V ■ Unid...
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Datasheet
|
ESDA8V2-1J
|
Overview
ESDA8V2-1J
EOS and ESD Transil™ protection for charger and battery port
Features
■ Breakdown voltage VBR = 8.
2 V ■ Unidirectional device ■ High peak power dissipation: 500 W
(8/20 µs waveform) ■ ESD protection level better than
IEC 61000-4-2, level 4: 30 kV contact discharge ■ Low leakage current ( 0.
5 µA @ 5 V)
Benefits
■ High EOS and ESD protection level ■ High integration ■ Suitable for high density boards
Complies with the following standards:
■ IEC 61000-4-2 level 4 – ±15 kV (air discharge) – ±8 kV (contact discharge)
■ MIL STD 883G - Method 3015-7: class 3B – HBM (human body model): ≥8kV
Applications
This product is particularly recommended for the protection of power supply lines of...
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