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ESDA8V2-1J

Part Number ESDA8V2-1J
Manufacturer ST Microelectronics
Description EOS and ESD Transil protection
Published Sep 18, 2009
Detailed Description ESDA8V2-1J EOS and ESD Transil™ protection for charger and battery port Features ■ Breakdown voltage VBR = 8.2 V ■ Unid...
Datasheet ESDA8V2-1J





Overview
ESDA8V2-1J EOS and ESD Transil™ protection for charger and battery port Features ■ Breakdown voltage VBR = 8.
2 V ■ Unidirectional device ■ High peak power dissipation: 500 W (8/20 µs waveform) ■ ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge ■ Low leakage current ( 0.
5 µA @ 5 V) Benefits ■ High EOS and ESD protection level ■ High integration ■ Suitable for high density boards Complies with the following standards: ■ IEC 61000-4-2 level 4 – ±15 kV (air discharge) – ±8 kV (contact discharge) ■ MIL STD 883G - Method 3015-7: class 3B – HBM (human body model): ≥8kV Applications This product is particularly recommended for the protection of power supply lines of...






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