isc Silicon
NPN Power
Transistor
2SD1440
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCES
Collector-Emitter Voltage
1500
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
3.
5
A
ICP
Collector Current-Peak
13
A
IBP
Base Current-Peak
Collector Power Dissipation @ Ta= 25℃
PC Collector Power Dissipation @ TC= 25℃
TJ
Junction Temperature
3.
5
A
2.
...