isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
2.
5
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1543
isc website：www.
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