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BL Galaxy Electrical
Silicon Epitaxial Planar
Transistor
FEATURES
z Low noise and high gain: NF=1.
1dB TYP, Ga=11dB TYP.
@VCE=10V,IC=7mA,f=1.
0GHz
Production specification
2SC3356W
Pb
Lead-free
z
High power gain:MAG=13dB TYP.
@VCE=10V.
IC=20mA,f=1.
0GHz
APPLICATIONS
z
NPN Silicon Epitaxial Planar
Transistor.
SOT-323
ORDERING INFORMATION
Type No.
2SC3356W Marking R23/R24/R25 Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 20 12 3 100 200 -55...