Power
Transistors
2SC3871
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
0.
7±0.
1
10.
0±0.
2
4.
2±0.
2
s Features
5.
5±0.
2
2.
7±0.
2
4.
2±0.
2
16.
7±0.
3 7.
5±0.
2
q High-speed switching
q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Full-pack package which can be installed to the heat sink with
/ one screw
φ3.
1±0.
1 1.
3±0.
2
1.
4±0.
1
e s Absolute Maximum Ratings (TC=25˚C)
c type) Parameter
Symbol
Ratings
Unit
14.
0±0.
5 Solder Dip 4.
0
n d tage.
ued Collector to base voltage
VCBO
500
V
a e cle s contin Collector to emitter voltage
VCES
500
V
cy is VCEO
400
V
n u t life ed, d Emitter to base voltage
V...