PD - 91572A
IRG4RC10U
INSULATED GATE BIPOLAR
TRANSISTOR
Features
• UltraFast: Optimized for high operating frequencies ( 8-40 kHz in hard switching, 200 kHz in resonant mode) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • Industry standard TO-252AA package
C
UltraFast Speed IGBT
VCES = 600V
G E
VCE(on) typ.
= 2.
15V
@VGE = 15V, IC = 5.
0A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions
D-PAK TO-252AA
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector...