PD 91571A
IRG4RC10UD
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
C
UltraFast CoPack IGBT
VCES = 600V VCE(on) typ.
= 2.
15V
• UltraFast: Optimized for medium operating frequencies ( 8-40 kHz in hard switching, 200 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-252AA package • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance ...