DatasheetsPDF.com

AGR09030E

Part Number AGR09030E
Manufacturer TriQuint Semiconductor
Description Lateral MOSFET
Published Oct 5, 2009
Detailed Description AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030E is a high-voltage, gold-met...
Datasheet AGR09030E





Overview
AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications.
This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance.
Packaged in an industry-standard CuW package capable of delivering a minimum output pow...






Similar Datasheet



Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)