AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power
Transistor
Introduction
The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect
transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.
Table 1.
Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR19125EU AGR19125EF Sym Rı JC Rı JC Value 0.
5 0.
5 Unit °C/W °C/W
Table 2.
Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR19125EU AGR19125EF Derate Above 25...