AGR21090E 90 W, 2.
110 GHz—2.
170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor (LDMOS) RF power
transistor suitable for wideband code-division multiple access (W-CDMA), and single and multicarrier class AB wireless base station power amplifier applications.
Table 1.
Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR21090EU AGR21090EF Sym Rı JC Rı JC Value 0.
7 0.
7 Unit °C/W °C/W
Table 2.
Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR21090EU AGR21090EF Derate Above 25 ˇ C: AGR21090EU AGR21090EF CW RF Inpu...