AGR21180EF 180 W, 2.
110 GHz—2.
170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power
transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications.
Table 1.
Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 0.
35 Unit °C/W
Table 2.
Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C Derate Above 25 ˇ C Operating Junction Temperature Storage Temperature Range Sym Value 65 VDSS VGS –0.
5, 15 PD 500 ...