FDB088N08 — N-Channel PowerTrench® MOSFET FDB088N08 N-Channel PowerTrench® MOSFET 75 V, 85 A, 8.
8 mΩ November 2013 Features • RDS(on) = 7.
3 mΩ (Typ.
) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • 100% Internal RG Screening for Easy Paralleling Operation • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Batte...

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